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1. product profile 1.1 general description 170 w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 1800 mhz to 1990 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5 mhz. [2] test signal: 3gpp test model 1; 64 dpch; par = 7.2 db at 0.01 % probability on ccdf. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? decoupling leads to enable improved video bandwidth (100 mhz typical) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? integrated current sense ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifier for w-cdma base statio ns and multi carrier applications in the 1800 mhz to 1990 mhz frequency range BLF8G19LS-170BV power ldmos transistor rev. 2 ? 28 march 2013 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma [1] 1930 to 1990 1300 32 60 18.0 32 ? 31 1-carrier w-cdma [2] 1805 to 1880 1300 28 33 19.8 29 ? 40
BLF8G19LS-170BV all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 28 march 2013 2 of 13 nxp semiconductors BLF8G19LS-170BV power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1drain 2gate 3source [1] 4,5 video decoupling 6 sense gate 7 sense drain 1 5 4 2 7 6 3
table 3. ordering information type number package name description version BLF8G19LS-170BV - earless flanged ldmost ceramic package; 6 leads sot1120b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v v gs(sense) sense gate-source voltage ? 0.5 +9 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 55 w 0.27 k/w
BLF8G19LS-170BV all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 28 march 2013 3 of 13 nxp semiconductors BLF8G19LS-170BV power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the BLF8G19LS-170BV is capable to withst and a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =32v; i dq = 1300 ma; p l = 214 w (cw); f = 1930 mhz and also under the following conditions: v ds =28v; i dq =1300ma; p l = 170 w (cw); f = 1805 mhz. table 6. dc characteristics t j = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.16ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 216 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 4.5 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -40-a i gss gate leakage current v gs =11v; v ds = 0 v - - 450 na g fs forward transconductance v ds =10v; i d = 10.8 a - 16 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =7.56a -0.06- ? i dq quiescent drain current main transistor: v ds =32 v sense transistor: i ds = 23.4 ma; v ds =30.4v 1175 1300 1425 ma table 7. rf characteristics test signal: 2-carrier w-cdma; par 8.4 db at 0.01 % probability on ccdf; 3gpp test model 1; 64 dpch; f 1 = 1937.5 mhz; f 2 = 1962.5 mhz; f 3 = 1982.5 mhz; f 4 = 1987.5 mhz; rf performance at v ds = 32 v; i dq = 1300 ma; t case = 25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 60 w 17.3 18.0 20.2 db rl in input return loss p l(av) = 60 w - ? 13 ? 7db ? d drain efficiency p l(av) = 60 w 28 32 - % acpr 5m adjacent channel power ratio (5 mhz) p l(av) = 60 w - ? 31 ? 28 dbc
BLF8G19LS-170BV all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 28 march 2013 4 of 13 nxp semiconductors BLF8G19LS-170BV power ldmos transistor 7.2 impedance information [1] z s and z l defined in figure 1 . 7.3 vbw in class-ab operation the BLF8G19LS-170BV shows 100 mhz (typical) video bandwidth in a class-ab test circuit in the 1900 mhz band at v ds = 32 v and i dq = 1.3 a. table 8. typical impedance i dq = 1300 ma; main transistor v ds = 32 v. f z s [1] z l [1] (mhz) (? ) (? ) 1930 1.8 ? j3.4 1.1 ? j2.8 1960 1.8 ? j3.4 1.1 ? j2.8 1990 1.9 ? j4.0 1.0 ? j2.8 fig 1. definition of transistor impedance 001aaf059 drain z l z s gate
BLF8G19LS-170BV all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 28 march 2013 5 of 13 nxp semiconductors BLF8G19LS-170BV power ldmos transistor 7.4 test circuit [1] american technical ce ramics type 100b or capacitor of same quality. [2] murata or capacitor of same quality. printed-circuit board (pcb): taconic rf35; ? r = 3.5; thickness = 0.765 mm; thickness copper plating = 35 ? m. see table 9 for a list of components. fig 2. component layout for class-ab production test circuit table 9. list of components for test circuit see figure 2 . component description value remarks c1, c2, c3, c4, c5 multilayer ceramic chip capacitor 10 pf [1] atc100b c6, c8 multilayer ceramic chip capacitor 0.1 pf [1] atc100b c7 multilayer ceramic chip capacitor 0.2 pf [1] atc100b c9, c10 multilayer ceramic chip capacitor 120 pf [1] atc100b c11, c16, c17 multilayer ce ramic chip capacitor 4.7 ? f, 50 v [2] murata c12, c13 multilayer ceramic chip capacitor 10 ? f, 50 v [2] murata c14, c15 multilayer ceramic chip capacitor 1 ? f, 50 v [2] murata c18 electrolytic capacitor 470 ? f, 6 3 v r1 smd resistor 4.7 ? philips 1206 r2 smd resistor 470 ? philips 1206 r3 smd resistor 820 ? philips 1206 r4 smd resistor 12 ? philips 1206 r5 smd resistor 2200 ? philips 1206

BLF8G19LS-170BV all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 28 march 2013 6 of 13 nxp semiconductors BLF8G19LS-170BV power ldmos transistor 7.5 graphs 7.5.1 cw pulse v ds =32v; i dq = 1300 ma; t p = 100 ? s; ? =10%. (1) f = 1935 mhz (2) f = 1960 mhz (3) f = 1985 mhz v ds =32v; i dq = 1300 ma; t p = 100 ? s; ? =10%. (1) f = 1935 mhz (2) f = 1960 mhz (3) f = 1985 mhz fig 3. power gain and drain efficiency as function of output power; typical values fig 4. input return loss as a function of output power; typical values

BLF8G19LS-170BV all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 28 march 2013 7 of 13 nxp semiconductors BLF8G19LS-170BV power ldmos transistor 7.5.2 2-carrier w-cdma v ds =32v; i dq = 1300 ma. (1) f = 1935 mhz (2) f = 1960 mhz (3) f = 1985 mhz v ds =32v; v gs =32v (1) f = 1935 mhz (2) f = 1960 mhz (3) f = 1985 mhz fig 5. power gain and drain efficiency as function of output power; typical values fig 6. adjacent channel power ratio (5 mhz) and adjacent channel power ratio (10 mhz) as function of output power; typical values v ds =32v; i dq = 1300 ma. (1) f = 1935 mhz (2) f = 1960 mhz (3) f = 1985 mhz fig 7. peak-to-average power ratio as a function of output power; typical values

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BLF8G19LS-170BV all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 28 march 2013 8 of 13 nxp semiconductors BLF8G19LS-170BV power ldmos transistor 7.5.3 2-tone vbw v ds =32v; i dq = 1300 ma; f c = 1960 mhz. (1) low frequency component (2) high frequency component fig 8. vbw capability in class-ab test circuit

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BLF8G19LS-170BV all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 28 march 2013 9 of 13 nxp semiconductors BLF8G19LS-170BV power ldmos transistor 8. package outline fig 9. package outline sot1120b references outline version european projection issue date iec jedec jeita sot1120b sot1120b_po 12-04-11 12-06-14 unit (1) mm max nom min 4.75 3.45 1.83 1.57 0.18 0.10 20.02 19.61 19.96 19.66 9.53 9.27 1.14 0.89 19.94 18.92 9.91 9.65 a dimensions earless flanged ldmost ceramic package; 6 leads sot1120b bb 1 12.83 12.57 cdd 1 ee 1 9.53 9.25 fhl 3.56 3.30 q (2) 1.70 1.45 u 1 20.70 20.45 u 2 0.51 inches max nom min 0.187 0.136 0.072 0.062 0.007 0.004 0.788 0.772 0.786 0.774 0.375 0.365 0.045 0.035 0.785 0.745 0.39 0.38 0.505 0.495 0.375 0.364 0.140 0.130 0.067 0.057 0.815 0.805 9.53 8.71 0.375 0.343 4.60 4.32 0.181 0.170 0.02 0.15 0.0059 w 2 z yz 1 15.52 14.50 0.611 0.571 z 2 64 60 64 60 0 5 10 mm scale 6 7 2 45 1 d u 1 a f l d 1 d e 1 u 2 h z z 2 d w 2 b 1 q b z 1 e c 3 note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. y
BLF8G19LS-170BV all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 28 march 2013 10 of 13 nxp semiconductors BLF8G19LS-170BV power ldmos transistor 9. abbreviations 10. revision history table 10. abbreviations acronym description 3gpp 3rd generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel esd electrostatic discharge ldmos laterally diffused metal oxide semiconductor ldmost laterally diffused metal oxide semiconductor transistor mtf median time to failure par peak-to-average ratio vbw video bandwidth vswr voltage standing wave ratio w-cdma wideband code division multiple access table 11. revision history document id release date data sheet status change notice supersedes BLF8G19LS-170BV v.2 20130328 product data sheet - BLF8G19LS-170BV v.1 modifications: ? the status of this document has b een changed to product data sheet. BLF8G19LS-170BV v.1 20130108 preliminary data sheet - -
BLF8G19LS-170BV all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 28 march 2013 11 of 13 nxp semiconductors BLF8G19LS-170BV power ldmos transistor 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 11.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 11.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLF8G19LS-170BV all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 28 march 2013 12 of 13 nxp semiconductors BLF8G19LS-170BV power ldmos transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 11.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 12. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLF8G19LS-170BV power ldmos transistor ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 28 march 2013 document identifier: BLF8G19LS-170BV please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 13. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation . . . . . . . . . 3 7.2 impedance information . . . . . . . . . . . . . . . . . . . 4 7.3 vbw in class-ab operation . . . . . . . . . . . . . . . 4 7.4 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.5 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.5.1 cw pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.5.2 2-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 7 7.5.3 2-tone vbw . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 11 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 11.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 contact information. . . . . . . . . . . . . . . . . . . . . 12 13 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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